The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Sep. 24, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yiyang Wan, Sunnyvale, CA (US);
Takashi Kuratomi, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 8/24 (2006.01); C23C 8/36 (2006.01); C23C 8/80 (2006.01); H01L 21/285 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); C23C 8/24 (2013.01); C23C 8/36 (2013.01); C23C 8/80 (2013.01); H01J 37/3299 (2013.01); H01J 37/32449 (2013.01); H01L 21/28568 (2013.01); H01J 2237/3321 (2013.01);
Abstract
A method and apparatus for nitride capping of titanium materials via chemical vapor deposition techniques is provided. The method includes forming a titanium nitride layer upon a titanium material layer formed on a substrate. The titanium nitride layer is formed by exposing the titanium material layer to a hydrogen-rich nitrogen-containing plasma followed by exposing the titanium material layer to a nitrogen-rich nitrogen-containing plasma. The titanium nitride layer is then exposed to an argon plasma followed by exposing the titanium nitride layer to a halide soak process.