The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Oct. 16, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Oreste Madia, Leuven, BE;

Andrea Illiberi, Leuven, BE;

Michael Eugene Givens, Helsinki, FI;

Tatiana Ivanova, Espoo, FI;

Charles Dezelah, Helsinki, FI;

Varun Sharma, Helsinki, FI;

Assignee:

ASM IP Holding, B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); H01L 21/02565 (2013.01); H01L 21/02639 (2013.01);
Abstract

Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH, NO, NOand HO.


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