The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jul. 06, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Samuel E. Bradshaw, Sacramento, CA (US);

Justin Eno, El Dorado Hills, CA (US);

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G11C 29/00 (2006.01); G11C 13/00 (2006.01); G06F 11/16 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/70 (2013.01); G06F 11/1612 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 29/52 (2013.01); G11C 29/72 (2013.01); G11C 29/883 (2013.01);
Abstract

Exemplary methods, apparatuses, and systems include determining that data in a group of memory cells of a first memory device is to be moved to a spare group of memory cells. The group of memory cells spans a first dimension and a second dimension that is orthogonal to the first dimension and the spare group of memory cells also spans the first dimension and the second dimension. The data is read from the group of memory cells along the first dimension of the group of memory cells. The data is written to the spare group of memory cells along the second dimension of the spare group of memory cells.


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