The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Feb. 16, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Byunghoon Lee, Seoul, KR;
Maenghyo Cho, Seoul, KR;
Changyoung Jeong, Yongin-si, KR;
Muyoung Kim, Seoul, KR;
Junghwan Moon, Seoul, KR;
Sungwoo Park, Seoul, KR;
Hyungwoo Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Seoul National University R&DB Foundation, Seoul, KR;
Abstract
A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.