The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Mar. 08, 2019
Applicants:

Agency for Science, Technology and Research, Singapore, SG;

National University of Singapore, Singapore, SG;

Inventors:

Wen Xiao, Singapore, SG;

Wendong Song, Singapore, SG;

Jun Ding, Singapore, SG;

Ernult Franck Gerard, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1273 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01);
Abstract

Various embodiments may provide a memory cell. The memory cell may include an active electrode including an active electrode material. The memory cell may also include a first noble electrode contact with the active electrode, the first noble electrode being a patterned electrode including a noble electrode material. The memory cell may further include a resistive switching layer in contact with the active electrode and the first noble electrode. The memory cell may additionally include a second noble electrode including a noble electrode material, the second noble electrode in contact with the resistive switching layer.


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