The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Aug. 21, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xinshu Cai, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Kiok Boone Elgin Quek, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 29/788 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 28/60 (2013.01); H01L 29/0653 (2013.01); H01L 29/66825 (2013.01); H01L 29/7884 (2013.01);
Abstract

A nonvolatile memory device is provided. The nonvolatile memory device comprises an active region surrounded by an isolation structure. A floating gate may be arranged over the active region, the floating gate having a first end and a second end over the isolation structure. A first doped region may be provided in the active region adjacent to a first side of the floating gate and a second doped region may be provided in the active region adjacent to a second side of the floating gate. A first capacitor may be provided over the floating gate, whereby a first electrode of the first capacitor is electrically coupled to the floating gate. A second capacitor may be provided, whereby a first electrode of the second capacitor is over the isolation structure and adjacent to the floating gate.


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