The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Oct. 08, 2019
Micron Technology, Inc., Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Ramanathan Gandhi, Boise, ID (US);
Yi Fang Lee, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Scott E. Sills, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A device comprises a vertical transistor. The vertical transistor comprises a pillar structure, at least one gate electrode, and a dielectric material. The pillar structure comprises a source region, a drain region, and a channel region. The source region and the drain region each individually comprise at least one electrically conductive material configured to inhibit hydrogen permeation therethrough. The channel region comprises a semiconductive material vertically between the source region and the drain region. The at least one gate electrode laterally neighbors the channel region of the semiconductive structure. The dielectric material is laterally between the semiconductive structure and the at least one gate electrode. Additional devices, and related electronic systems and methods are also disclosed.