The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

May. 27, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shigeru Sugioka, Higashihiroshima, JP;

Hidenori Yamaguchi, Higashihiroshima, JP;

Noriaki Fujiki, Kawanishi, JP;

Keizo Kawakita, Higashihiroshima, JP;

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/528 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/5283 (2013.01); H10B 12/0335 (2023.02); H10B 12/31 (2023.02);
Abstract

A semiconductor device includes a semiconductor substrate; a first insulating film and a second insulating film provided above the semiconductor substrate; a low-k film provided between the first insulating film and the second insulating film; an element formation region in which elements included in an electric circuit are formed in the semiconductor substrate; a scribe region provided around the element formation region; a cut portion provided on the outer periphery of the scribe region; and a groove formed between the cut portion and the element formation region, wherein the groove penetrates through the low-k film.


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