The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Apr. 02, 2021
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Nan Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76807 (2013.01); H01L 29/41791 (2013.01); H01L 21/76877 (2013.01); H01L 23/53257 (2013.01); H01L 29/45 (2013.01); H01L 29/785 (2013.01); H01L 2221/1036 (2013.01);
Abstract

A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a substrate; a gate structure on the substrate and extending along a first direction; source/drain doped layers in the substrate at sides of the gate structure; a first conductive structure on the source/drain doped layers; an opening at a top of the gate structure and the first conductive structure; and a second conductive structure in the opening. The opening extends along a second direction and the second direction is different from the first direction. The second conductive structure is insulated from the first conductive structure and in contact with the gate structure.


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