The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Nov. 23, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Kandabara Tapily, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/677 (2006.01); H01L 21/67 (2006.01); C23C 16/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/687 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); C23C 16/00 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02074 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02214 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/02277 (2013.01); H01L 21/02301 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/3105 (2013.01); H01L 21/321 (2013.01); H01L 21/67196 (2013.01); H01L 21/67201 (2013.01); H01L 21/67742 (2013.01); H01L 21/32 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract
Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiOfilm on the metal-containing catalyst layer on the dielectric material.