The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jul. 07, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Nancy Fung, Livermore, CA (US);

Gabriela Alva, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C23F 1/12 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); C23F 1/12 (2013.01); H01L 21/3065 (2013.01); H01L 21/30625 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01);
Abstract

A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas. The first etching gas is supplied continuously and the second etching gas is pulsed.


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