The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Oct. 23, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zeqing Shen, San Jose, CA (US);

Bo Qi, San Jose, CA (US);

Abhijit Basu Mallick, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/401 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01);
Abstract

Methods for depositing a silicon-containing film on a substrate are described. The method comprises heating a processing chamber to a temperature greater than or equal to 200° C.; maintaining the processing chamber at a pressure of less than or equal to 300 Torr; coflowing a silicon precursor and nitrous oxide (NO) into the processing chamber, and depositing a conformal silicon-containing film on the substrate. The silicon-containing film has dielectric constant (k-value) in a range of from about 3.8 to about 4.0, has a breakdown voltage of greater than 8 MV/cm at a leakage current of 1 mA/cmand has a leakage current of less than 1 nA/cmat 2 MV/cm.


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