The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

May. 07, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Litao Yang, Boise, ID (US);

Srinivas Pulugurtha, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 27/11 (2006.01); H01L 29/76 (2006.01); H01L 29/792 (2006.01); H01L 27/1157 (2017.01); H01L 27/108 (2006.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10802 (2013.01); H01L 23/5225 (2013.01); H01L 29/42392 (2013.01); H01L 29/66969 (2013.01); H01L 29/7841 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01);
Abstract

An apparatus comprises a first conductive structure and at least one transistor in electrical communication with the first conductive structure. The at least one transistor comprises a lower conductive contact coupled to the first conductive structure and a split-body channel on the lower conductive contact. The split-body channel comprises a first semiconductive pillar and a second semiconductive pillar horizontally neighboring the first semiconductive pillar. The at least one transistor also comprises a gate structure horizontally interposed between the first semiconductive pillar and the second semiconductive pillar of the split-body channel and an upper conductive contact vertically overlying the gate structure and coupled to the split-body channel. Portions of the gate structure surround three sides of each of the first semiconductive pillar and the second semiconductive pillar. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.


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