The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
May. 07, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Zong-Han Lin, Tainan, TW;
Yi-Han Ye, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a lateral diffusion metal oxide semiconductor (LDMOS) device includes the steps of first forming a first fin-shaped structure and a second fin-shaped structure on a substrate, forming a shallow trench isolation (STI) between the first fin-shaped structure and the second fin-shaped structure, forming a first gate structure on the first fin-shaped structure and a second gate structure on the second fin-shaped structure, forming a source region on the first fin-shaped structure, forming a drain region on the second fin-shaped structure, and forming a contact field plate directly on the STI.