The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Nov. 02, 2022
Applicant:

University of Science and Technology Beijing, Beijing, CN;

Inventors:

Yue Zhang, Beijing, CN;

Xiankun Zhang, Beijing, CN;

Zheng Zhang, Beijing, CN;

Huihui Yu, Beijing, CN;

Mengting Huang, Beijing, CN;

Wenhui Tang, Beijing, CN;

Li Gao, Beijing, CN;

Xiaofu Wei, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/47 (2006.01); H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/43 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 31/0224 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/0665 (2013.01); H01L 29/40 (2013.01); H01L 29/43 (2013.01); H01L 29/47 (2013.01); H01L 29/7606 (2013.01); H01L 21/743 (2013.01); H01L 29/41725 (2013.01); H01L 29/7839 (2013.01); H01L 31/022408 (2013.01);
Abstract

Disclosed is a metal-semiconductor contact structure based on two-dimensional (2D) semimetal electrodes, including a semiconductor module and a metal electrode module, where the semiconductor module is a 2D semiconductor material, and the metal electrode module is a 2D semimetal material with no dangling bonds on its surface; the 2D semiconductor material and the 2D semimetal material are interfaced with a Van der Waals interface with a surface roughness of 0.01-1 nanometer (nm) and no dangling bonds on the surface, the 2D semiconductor material and the 2D semimetal material are spaced less than 1 nm apart.


Find Patent Forward Citations

Loading…