The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Jun. 02, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kartik Ramaswamy, San Jose, CA (US);

Yang Yang, Cupertino, CA (US);

Kenneth Collins, San Jose, CA (US);

Steven Lane, Porterville, CA (US);

Gonzalo Monroy, Santa Clara, CA (US);

Yue Guo, Redwood City, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/305 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3053 (2013.01); H01J 37/3255 (2013.01); H01J 37/32137 (2013.01); H01J 37/32568 (2013.01); H01L 21/67069 (2013.01); H01J 37/32091 (2013.01); H01J 37/32119 (2013.01); H01J 37/32183 (2013.01); H01J 2237/002 (2013.01); H01J 2237/3174 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.


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