The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jan. 07, 2022
Applicant:
Hefei Reliance Memory Limited, Hefei, CN;
Inventors:
Deepak Chandra Sekar, San Jose, CA (US);
Gary Bela Bronner, Los Altos, CA (US);
Frederick A. Ware, Los Altos Hills, CA (US);
Assignee:
Hefei Reliance Memory Limited, Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); G11C 13/0097 (2013.01); G11C 2213/15 (2013.01); G11C 2213/72 (2013.01); G11C 2213/74 (2013.01); G11C 2213/75 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract
A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.