The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Feb. 04, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xinyu Bao, Fremont, CA (US);

Chun Yan, San Jose, CA (US);

Hua Chung, San Jose, CA (US);

Schubert S. Chu, San Francisco, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 25/08 (2006.01); C30B 25/00 (2006.01); C30B 33/00 (2006.01); C23C 16/44 (2006.01); C23C 16/30 (2006.01); C23C 16/48 (2006.01); C23C 16/56 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); C30B 25/14 (2006.01); C30B 29/40 (2006.01); H01L 21/67 (2006.01); C30B 35/00 (2006.01); H01L 21/225 (2006.01); H01L 21/30 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 25/08 (2013.01); C23C 16/301 (2013.01); C23C 16/4405 (2013.01); C23C 16/481 (2013.01); C23C 16/56 (2013.01); C30B 25/00 (2013.01); C30B 25/105 (2013.01); C30B 25/12 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 29/40 (2013.01); C30B 33/00 (2013.01); C30B 35/00 (2013.01); H01L 21/67167 (2013.01); H01L 21/67196 (2013.01); H01L 21/67207 (2013.01); H01L 21/67253 (2013.01); C30B 29/06 (2013.01); H01L 21/2252 (2013.01); H01L 21/30 (2013.01); H01L 21/67201 (2013.01);
Abstract

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.


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