The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

May. 16, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kilian Roth, Munich, DE;

Sonja Koller, Lappersdorf, DE;

Josef Hagn, Taufkirchen, DE;

Andreas Wolter, Regensburg, DE;

Andreas Augustin, Munich, DE;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01Q 13/18 (2006.01); H01L 23/66 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01Q 1/22 (2006.01);
U.S. Cl.
CPC ...
H01Q 13/18 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/528 (2013.01); H01L 23/66 (2013.01); H01Q 1/2283 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01);
Abstract

Embodiments include semiconductor packages and methods of forming the semiconductor packages. A semiconductor package includes a die over a substrate, a first conductive layer over the die, and a cavity resonator antenna over the first conductive layer and substrate. The cavity resonator antenna includes a conductive cavity, a cavity region, and a plurality of interconnects. The conductive cavity is over the first conductive layer and surrounds the cavity region. The semiconductor package also includes a second conductive layer over the cavity resonator antenna, first conductive layer, and substrate. The conductive cavity may extend vertically from the first conductive layer to the second conductive layer. The cavity region may be embedded with the conductive cavity, the first conductive layer, and the second conductive layer. The plurality of interconnects may include first, second, and third interconnects. The first interconnects may include through-mold vias (TMVs), through-silicon vias (TSVs), conductive sidewalls, or conductive trenches.


Find Patent Forward Citations

Loading…