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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11646382 B1

PDFFull Text
Date of Patent:
May. 09, 2023

Filed:

May. 11, 2021

Junction barrier schottky diode device and method for fabricating the same

Applicant:

Taipei Anjet Corporation, Taipei, TW;

Inventors:

Nobuo Machida, Kyoto, JP;

Wen-Tsung Chang, Taipei, TW;

Wen-Chin Wu, Taipei, TW;

Assignee:

TAIPEI ANJET CORPORATION, Taipei, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 21/285 (2006.01); H01L 21/443 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/0495 (2013.01); H01L 21/28537 (2013.01); H01L 21/28581 (2013.01); H01L 21/443 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/47 (2013.01); H01L 29/475 (2013.01); H01L 29/6606 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/66969 (2013.01);
Abstract

A junction barrier Schottky diode device and a method for fabricating the same is disclosed. In the junction barrier Schottky device includes an N-type semiconductor layer, a plurality of first P-type doped areas, a plurality of second P-type doped areas, and a conductive metal layer. The first P-type doped areas and the second P-type doped are formed in the N-type semiconductor layer. The second P-type doped areas are self-alignedly formed above the first P-type doped areas. The spacing between every neighboring two of the second P-type doped areas is larger than the spacing between every neighboring two of the first P-type doped areas. The conductive metal layer, formed on the N-type semiconductor layer, covers the first P-type doped areas and the second P-type doped areas.

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