The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Jun. 24, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Lin Hou, Leuven, BE;
Peter Rabkin, Cupertino, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
Ramy Nashed Bassely Said, San Jose, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/036 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05561 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01);
Abstract
A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.