The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Jan. 10, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Kandabara Tapily, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); C23C 16/045 (2013.01); C23C 16/402 (2013.01); C23C 16/4554 (2013.01); C23C 16/45534 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/02186 (2013.01);
Abstract
A method of fabricating air gaps in advanced semiconductor devices for low capacitance interconnects. The method includes exposing a substrate to a gas pulse sequence to deposit a material that forms an air gap between raised features.