The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Nov. 23, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
David Ross Economy, Boise, ID (US);
Brian Beatty, Portland, OR (US);
John Mark Meldrim, Boise, ID (US);
Yongjun Jeff Hu, Boise, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/28 (2006.01); C01G 41/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02645 (2013.01); C01G 41/00 (2013.01); C23C 16/28 (2013.01); H01L 21/0257 (2013.01); C01P 2006/40 (2013.01);
Abstract
Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.