The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Jun. 01, 2020
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Yongshun Sun, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Xinshu Cai, Singapore, SG;
Lanxiang Wang, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11558 (2017.01); H01L 27/11539 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11558 (2013.01); H01L 27/11539 (2013.01); H01L 29/66181 (2013.01);
Abstract
A memory device is provided. The memory device includes an active region in a substrate, an electrically-isolated electrode, and a dielectric layer. The electrically-isolated electrode is disposed over the active region. The dielectric layer is disposed between the electrically-isolated electrode and the active region and has a first dielectric portion having a first thickness and a second dielectric portion having a second thickness.