The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Dec. 29, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Zhaoyao Zhan, Singapore, SG;
Qianwei Ding, Singapore, SG;
Xiaohong Jiang, Singapore, SG;
Ching Hwa Tey, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 27/146 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0324 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 27/14692 (2013.01); H01L 31/028 (2013.01); H01L 31/035227 (2013.01);
Abstract
The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.