The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

Jun. 15, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Shin-Hung Li, Nantou County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 29/401 (2013.01); H01L 29/66568 (2013.01); H01L 29/7836 (2013.01); H01L 21/2652 (2013.01); H01L 21/28211 (2013.01);
Abstract

The invention provides a semiconductor structure, the semiconductor structure includes a substrate, two shallow trench isolation structures are located in the substrate, a first region, a second region and a third region are defined between the two shallow trench isolation structures, the second region is located between the first region and the third region. Two thick oxide layers are respectively located in the first region and the third region and directly contact the two shallow trench isolation structures respectively, and a thin oxide layer is located in the second region, the thickness of the thick oxide layer in the first region is greater than that of the thin oxide layer in the second region.


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