The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

May. 19, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Joerg Ortner, Drobollach, AT;

Marcel Heller, Stolpen, DE;

Dieter Kaiser, Dresden, DE;

Nicolo Morgana, Dresden, DE;

Jens Schneider, Moritzburg OT Friedewald, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01);
Abstract

A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.


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