The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Sep. 30, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shigeru Sugioka, Tokyo, JP;

Keizo Kawakita, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 23/52 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10829 (2013.01); H01L 23/5222 (2013.01); H01L 23/642 (2013.01); H01L 27/1087 (2013.01); H01L 28/40 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01);
Abstract

An apparatus comprising first and second interconnections spaced apart from one another, an interlayer insulating material over the first and second interconnections, first and second contacts in the interlayer insulating material and spaced apart from one another, third and fourth interconnections over the interlayer insulating material and spaced apart from one another, and compensation capacitors in a capacitor region. The third interconnections are coupled with the first interconnections through the first contacts and the fourth interconnections are coupled with the second interconnections through the second contacts. The compensation capacitors comprise lower electrodes over the interlayer insulating material, dielectric materials over the lower electrodes, and upper electrodes over the dielectric materials. The lower electrodes comprise edge portions in contact with the second contacts. The third interconnections are elongated over the dielectric materials and are configured to provide elongated portions as the upper electrodes of the compensation capacitors. Related methods, memory devices, and electronic systems are disclosed.


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