The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Nov. 30, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hae-Jung Yu, Seoul, KR;

Kyung Suk Oh, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/13 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/13 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/82005 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/1431 (2013.01);
Abstract

A semiconductor package includes a redistribution layer having a first surface and a second surface opposite to each other, the redistribution layer including a plurality of first redistribution pads on the first surface, a semiconductor chip on the second surface of the redistribution layer, an active surface of the semiconductor chip facing the redistribution layer, a plurality of conductive structures on the second surface of the redistribution layer, the plurality of conductive structures being spaced apart from the semiconductor chip, and a plurality of external connection terminals on and coupled to the conductive structures, the plurality of first redistribution pads have a pitch smaller than a pitch of the plurality of external connection terminals.


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