The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Dec. 07, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Hsih-Yang Chiu, Taoyuan, TW;
Yi-Jen Lo, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract
A semiconductor structure includes a first die, a second die, and a first conductive via. The first die includes a first dielectric layer and a first landing pad embedded in the first dielectric layer. The second die includes a second dielectric layer and a second landing pad embedded in the second dielectric layer. The first die is disposed on the second die. The second landing pad has a through-hole. The first conductive via extends from the first landing pad toward the second landing pad and penetrates through the through-hole of the second landing pad.