The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Dec. 21, 2020
Hoya Corporation, Tokyo, JP;
HOYA CORPORATION, Tokyo, JP;
Abstract
Provided is a mask blank () for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film. The mask blank () in which a phase shift film () made of a material containing silicon, a light shielding film () made of a material containing chromium, oxygen, and carbon, and a hard mask film () made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate () is characterized in that the light shielding film () is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film () side and in a region close thereto, the light shielding film () has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film () excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.