The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Feb. 24, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jinrui Guo, Santa Clara, CA (US);

Ludovic Godet, Sunnyvale, CA (US);

Rutger Meyer Timmerman Thijssen, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/24 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/042 (2013.01); C23C 16/24 (2013.01); C23C 16/308 (2013.01); C23C 16/32 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.


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