The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Apr. 13, 2021
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventor:
Erh-Kun Lai, Taichung, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/11582 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01);
Abstract
A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure comprises a channel element. The channel element comprises a substrate portion and a vertical channel portion. The vertical channel portion is adjoined on the substrate portion. The substrate portion and the vertical channel portion both comprise single crystal silicon.
Lai, Erh-Kun. (2023). Semiconductor structure including vertical channel portion and manufacturing method for the same (U.S. Patent No. 11626517). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11626517
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile