The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Jun. 15, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41783 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 21/823892 (2013.01); H01L 27/0922 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/6659 (2013.01); H01L 29/7835 (2013.01);
Abstract
A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.