The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Dec. 03, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 21/28 (2006.01); H01L 27/11563 (2017.01); H01L 27/11551 (2017.01); H01L 27/1157 (2017.01); H01L 27/11578 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/28141 (2013.01); H01L 27/1157 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01);
Abstract
A method for forming a semiconductor device includes forming a metal layer and a spacer adjacent to the metal layer. The spacer includes a composite-dielectric layer including a composite-dielectric material. A composition of the composite-dielectric material is a mixture of a composition of a first dielectric material and a composition of a second dielectric material different from the first dielectric material.