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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11626323 B1

PDFFull Text
Date of Patent:
Apr. 11, 2023

Filed:

Feb. 16, 2021

Semiconductor device

Applicant:

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventors:

Toshiyuki Kosaka, Yokohama, JP;

Haruo Kawata, Yokohama, JP;

Assignee:

SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;

Attorney:

Smith, Gambrell & Russell, LLP

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 27/088 (2006.01); H01L 21/66 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/02378 (2013.01); H01L 21/02642 (2013.01); H01L 21/0332 (2013.01); H01L 21/76816 (2013.01); H01L 21/76829 (2013.01); H01L 21/76898 (2013.01); H01L 27/0883 (2013.01); H01L 29/2003 (2013.01); H01L 22/12 (2013.01); H01L 23/142 (2013.01);
Abstract

A semiconductor device is made by: forming a metal film containing Al on a surface of a substrate product including a substrate and a nitride semiconductor layer on the substrate, the metal film covering a via hole forming predetermined region, and the surface of the substrate product being located on the nitride semiconductor layer side, forming an etching mask having an opening for exposing the via hole forming predetermined region on a back surface of the substrate product, the back surface of the substrate product being located on the substrate side, and forming a via hole in the substrate product by reactive ion etching, the via hole reaching the surface from the back surface and exposing the metal film. In the forming of the via hole, a reaction gas containing fluorine is used during a period at least including a termination of etching.

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