The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

May. 22, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ludovic Godet, Sunnyvale, CA (US);

Wayne McMillan, San Jose, CA (US);

Rutger Meyer Timmerman Thijssen, Santa Clara, CA (US);

Naamah Argaman, San Jose, CA (US);

Tapashree Roy, Bangalore, IN;

Sage Toko Garrett Doshay, Saratoga, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 25/04 (2023.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/311 (2013.01); H01L 21/32134 (2013.01); H01L 25/043 (2013.01); H01L 25/167 (2013.01);
Abstract

Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.


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