The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Jul. 17, 2020
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventors:
Xi Lin, Shanghai, CN;
Sheng Wang, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01);
Abstract
A method for forming a semiconductor structure includes providing a substrate, forming a stop layer over a surface of the substrate, forming a dielectric layer over a surface of the stop layer, forming a first opening in the dielectric layer and exposing a portion of the stop layer, modifying the portion of the stop layer exposed at a bottom of the first opening to form a modification layer, and removing the modification layer to form a second opening from the first opening.