The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Jan. 15, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Keith T. Wong, Mountain View, CA (US);
Hurshvardhan Srivastava, Santa Clara, CA (US);
Srinivas D. Nemani, Saratoga, CA (US);
Johannes M. van Meer, Middleton, MA (US);
Rajesh Prasad, Lexington, MA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); C23C 14/58 (2006.01); H01L 29/76 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 14/48 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02573 (2013.01); C23C 14/48 (2013.01); C23C 14/5806 (2013.01); C23C 16/305 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/02568 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7606 (2013.01); H01L 21/0257 (2013.01);
Abstract
A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.