The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Mar. 08, 2021
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jonghae Kim, San Diego, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Je-Hsiung Lan, San Diego, CA (US);
Ranadeep Dutta, Del Mar, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 27/28 (2006.01); H01F 41/04 (2006.01); H01L 49/02 (2006.01); H03H 7/01 (2006.01); H04B 1/18 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H01F 27/2804 (2013.01); H01F 41/041 (2013.01); H01L 28/10 (2013.01); H03H 7/0138 (2013.01); H04B 1/18 (2013.01); H04B 1/40 (2013.01); H01F 2027/2809 (2013.01);
Abstract
An inductor includes a first metallization layer multi-turn trace. The inductor also includes a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via. The inductor further includes a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.