The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
May. 13, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dimin Niu, Sunnyvale, CA (US);
Mu-Tien Chang, San Jose, CA (US);
Hongzhong Zheng, Los Gatos, CA (US);
Hyun-Joong Kim, Hwaseong-si, KR;
Won-hyung Song, Osan-si, KR;
Jangseok Choi, Campbell, CA (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.