The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

May. 22, 2019
Applicant:

Young Chang Chemical Co., Ltd, Gyeongsangbuk-do, KR;

Inventors:

Su Jin Lee, Daegu, KR;

Seung Hun Lee, Daegu, KR;

Seung Hyun Lee, Daegu, KR;

Assignee:

YOUNG CHANG CHEMICAL CO., LTD, Gyeongsangbuk-Do, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C11D 1/66 (2006.01); G03F 7/42 (2006.01); C11D 1/72 (2006.01); C11D 3/30 (2006.01); C11D 11/00 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/425 (2013.01); C11D 1/72 (2013.01); C11D 3/30 (2013.01); C11D 11/0047 (2013.01); G03F 7/2004 (2013.01);
Abstract

A processing solution composition for reducing micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, and 98 to 99.9998 wt % of water, reduces the number of micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source, and has a low LWR (Line Width Roughness) value, thus effectively improving the uniformity of the pattern.


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