The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Apr. 08, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Saravanapriyan Sriraman, Fremont, CA (US);

David M. Fried, Monte Sereno, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01); G03F 1/80 (2012.01); G03F 7/20 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01); G03F 1/80 (2013.01); G03F 7/705 (2013.01); G03F 7/70508 (2013.01); H01L 22/12 (2013.01);
Abstract

Computer implemented methods and computer program products have instructions for generating transfer functions that relate segments on lithography photomasks to features produced by photolithography and etching using such segments. Such methods may be characterized by the following elements: (a) receiving after development inspection metrology results produced from one or more first test substrates on which resist was applied and patterned using a set of design layout segments; (b) receiving after etch inspection metrology results produced from one or more second test substrates which were etched after resist was applied and patterned using said set of design layout segments; and (c) generating the transfer function using the set of design layout segments together with corresponding after development inspection metrology results and corresponding after etch inspection metrology results.


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