The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Jan. 15, 2021
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Robert L. Wright, Jr., Newtown, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
David M. Ermert, Danbury, CT (US);
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/08 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/08 (2013.01); C23C 16/0236 (2013.01); C23C 16/4408 (2013.01); C23C 16/45525 (2013.01);
Abstract
A methodology for (a) the etching of films of AlO, HfO, ZrO, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from AlO, HfO, ZrO, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOClin the presence of a reducing gas under process conditions.