The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Oct. 07, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Sheng Yun, Taipei, TW;
Shao-Ming Yu, Hsinchu County, TW;
Tung-Ying Lee, Hsinchu, TW;
Chih-Chieh Yeh, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/0847 (2013.01); H01L 29/66787 (2013.01); H01L 29/7827 (2013.01); H01L 29/0653 (2013.01); H01L 29/78642 (2013.01);
Abstract
A device includes a semiconductor fin, a first epitaxy structure and a gate stack. The semiconductor fin protrudes from a substrate. The first epitaxy feature laterally surrounds a first portion of the semiconductor fin. The gate stack laterally surrounds a second portion of the semiconductor fin above the first portion of the semiconductor fin, wherein the second portion of the semiconductor fin has a lower surface roughness than the first epitaxy feature.