The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Oct. 12, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/67 (2006.01); H01L 21/321 (2006.01); B24B 37/00 (2012.01); B24B 37/10 (2012.01); B24B 7/22 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); B24B 7/228 (2013.01); B24B 37/00 (2013.01); B24B 37/107 (2013.01); H01L 21/3212 (2013.01); H01L 21/67063 (2013.01); H01L 29/401 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 21/321 (2013.01); H01L 21/32105 (2013.01); H01L 29/0847 (2013.01);
Abstract
In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.