The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Jan. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Ying-Chih Chen, Hsinchu, TW;
Blanka Magyari-Kope, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 28/55 (2013.01); H01L 28/60 (2013.01); H01L 29/516 (2013.01); H01L 29/78391 (2014.09);
Abstract
A semiconductor device includes a substrate, a gate stack over the substrate, a channel layer over the gate stack, and a source/drain electrode. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The source/drain electrode is formed on the channel layer and disposed on sides of the gate stack.