The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Jan. 29, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Said Rami, Portland, OR (US);

Hyung-Jin Lee, Portland, OR (US);

Surej Ravikumar, Hillsboro, OR (US);

Kinyip Phoa, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 27/12 (2006.01); G06F 13/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); G06F 13/10 (2013.01); H01L 27/0886 (2013.01); H01L 27/12 (2013.01); H01L 29/0642 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/66659 (2013.01); H01L 29/66795 (2013.01); H01L 29/7843 (2013.01); H01L 29/7851 (2013.01);
Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over the fin, the gate structure having a center. A conductive source trench contact is over the fin, the conductive source trench contact having a center spaced apart from the center of the gate structure by a first distance. A conductive drain trench contact is over the fin, the conductive drain trench contact having a center spaced apart from the center of the gate structure by a second distance, the second distance greater than the first distance by a factor of three.


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