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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11621297 B1

PDFFull Text
Date of Patent:
Apr. 04, 2023

Filed:

Dec. 28, 2020

Stackable symmetrical operation memory bit cell structure with bidirectional selectors

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Yasir Sulehria, Latham, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

L. Jeffrey Kelly

Primary Examiner:

Moin M Rahman

Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01); H01L 25/065 (2023.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 5/063 (2013.01); H01L 25/0657 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/1206 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1641 (2013.01); H01L 45/1675 (2013.01); H01L 45/1691 (2013.01);
Abstract

A method of forming an electrical device that includes forming an amorphous semiconductor material on a metal surface of a memory device, in which the memory device is vertically stacked atop a first transistor. The amorphous semiconductor material is annealed with a laser anneal having a nanosecond duration to convert the amorphous semiconductor material into a crystalline semiconductor material. A second transistor is formed from the semiconductor material. The second transistor vertically stacked on the memory device.

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