The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Feb. 16, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chia-Ching Hsu, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/1157 (2017.01); H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell includes a memory gate, a dielectric layer, two charge trapping layers and two selective gates. The memory gate is disposed on a substrate. The two charge trapping layers are at two ends of the dielectric layer, and the charge trapping layers and the dielectric layer are sandwiched by the substrate and the memory gate. The two selective gates are disposed at two opposite sides of the memory gate, thereby constituting a two bit memory cell. The present invention also provides a method of forming said silicon-oxide-nitride-oxide-silicon (SONOS) memory cell.